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Investigation of the Optimum Growth Conditions of Wide-Bandgap Quaternary InAlGaN for UV-LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.42.1
- Print publication:
- 2001
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High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.24.1
- Print publication:
- 2001
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High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.15.1
- Print publication:
- 2001
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Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 682-688
- Print publication:
- 2000
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Current Injection UV-Emission from InAlGaN Multi-Quantum-Well Light-Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G12.6
- Print publication:
- 2000
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Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.32
- Print publication:
- 1999
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